EECE 310 Homework 7 (solution), Fall 2007
American University of Beirut · Electronics · 2 pages · with solution
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Wome week 7% o
a) Under DC condibione . (Gaiters ore open cir unt) P
Tre morfel reused as an Ampiher, 90 ibis binsedte operate inthe soburabon repion
To = $ Fatt (Vos-Vi) (0 + d¥p3)
3 =
> 0.ab alo =) id? V2 (i 40.026%2-5)
>)
0.5 = Vy (i.0695) % Vo = 0. 686V
6% \
-G= Mt 2 25* bom . WAS . \FoKH
0.2602 7 395a0>
“Avs - rte (Roll Rlits)
-3
—4%= - 0.6x10 (Ro MRM) => BURG = 3x9. 686n9 Kr = 19.348 KL
0. 6Sb
= ~~ a + Bs Be = \ > WE s P= en “ i — A es
© mR: Ye ya.34gK Ro 13.398K Wok 33K.
=» R= 32.38 KIL
- Vos = & 1, ¥,.+* G3. > 4-096 cagsrae\d.§ + Rgxd.2Gx10°
PRB. CE KR
- Vos -Vix 0-654 = Ve Vs Vy 20. 6X6 > Ve = 0-646 10.9 +R. Tp = 2.5606
Rin= Re UR - ees IMn
Ve = Yoo - 8, + py * 0. I7s4
$,.R,(0.2784) =4Mn Ri ~ 3G MN
2 O.DINY z= Ra = e385 Me
3.ceRy
Desyae C-. very large.
Ro=72.30KR
R= 3. 6F KIL
R,=3.6mMn
Qa = \.385 Mn.
b)
D Under AC oc high Prequeacy condi kens : Ca pacikers actos Rock ciccuit |
Ye= Vos 4 Hy
Moshek in cutdt ob Yc aVi. Vos t%s <Y
> V5y5 4 -Vow Vy, SO 06
bub Cy teak Grates Va=9 & V2 Ve
Moskeb co cubs i We <0. Ob.
=> it Vi pay FO OY > MOSFET Will enter cutath.
am Wil So.beiv SMOSFET il nkedlen cobsf:
‘ vs DEE Y
Fac toned value ft Vo se Wak MOSFET eaters cut Dag oS
2) Na a ad Nos 2 Vas -Ve > mosleli ns atures a
> Ves + 4s > Vos + %ys—Ne PadnrysS My, Voy
ys 2 Vi ry Mis = Ve (W200)
a> 9-5 4Vo> Ve + Voy
buk v, ayy
> oS tAvVi 2 VirVoy
> UWA) CV ab SY < — eVi S 2.5-Voy
1-64 ve
>Vi soley,
The bayed powtible input Wak ceoults in MOSFET eale
cin Riner ¢ hon
is ONSV Sy &
3) Vos etoe® = Vi oeak
Vipean £ 9-05Vay > Gornest value fv Pek cesulbsrn Megorlionis 0-0343V
Wy] S09. 696N oe avoid ud dh
Wil <0 -VEIAV oe avoid binest conten
Wel & 0.003 => avoid diskorlon
=> \Vilh 0.0343, bo aietd MN above. condi\iens